PART |
Description |
Maker |
RFP-20N50TPC |
Aluminum Nitride Terminations
|
Anaren Microwave
|
RFP-250375N6X50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
RFP-250250N6Z50-2 |
Aluminum Nitride Terminations 16 Watts, 50ohm
|
Anaren Microwave
|
RFP-100200N4Z50-2 |
Aluminum Nitride Terminations 10 Watts, 50ohm
|
Anaren Microwave
|
RFP-20N50TP |
0 MHz - 4000 MHz 50 ohm RF/MICROWAVE TERMINATION Aluminum Nitride Terminations
|
ANAREN INC Anaren Microwave
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
AML618L4011 |
Gallium Nitride (GaN)
|
Microsemi
|
04023J0R1PBWTR 06035J1R8BBTTR 02011J4R7CASTR 06033 |
CAP CERAMIC .1PF 25V 0402 RF SMD CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 25 V, 0.0000001 uF, SURFACE MOUNT, 0402 CAP CERAMIC 1.8PF 50V 0603 RFSMD CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 50 V, 0.0000018 uF, SURFACE MOUNT, 0603 Thin-Film Technology Thin-Film RF/Microwave Capacitors
|
AVX, Corp. AVX Corporation
|
NPT2020 |
Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution...
|
NPT35015 |
Gallium Nitride 28V, 18W RF Power Transistor
|
M/A-COM Technology Solution...
|
MFE211 MFE212 |
N-. HANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
RFP-20-50TPR |
Flanged Terminations
|
Anaren Microwave
|
|